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编译服务: 集成电路 编译者: zhaohuimin 编译时间: Nov 19, 2015 浏 览 量: 6

North Carolina State University in the USA has developed a new edge termination technique for 4H polytype silicon carbide (4H-SiC) high-voltage devices [Woongje Sung et al, IEEE Electron Device Letters, published online 29 April 2015]. The technique involves beveling the device and creating a junction termination extension (JTE) with implanted aluminium doping . Edge terminations are designed to avoid field crowding effects that cause premature breakdown.

  
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